MBR2030CT thru mbr2045ct symbol characteristics i (av) maximum average forward rectified current @t c =125 c i fsm maximum ratings 20 150 a a unit o maximum forward voltage (note 1) i f =10a @t j =25 c i f =10a @t j =125 c i f =20a @t j =25 c i f =20a @t j =125 c v f i r maximum dc reverse current at rated dc blocking voltage @t j =25 c @t j =125 c c j typical junction capacitance per element (note 3) t j operating temperature range - 0.57 0.84 0.72 0.1 15 2.0 300 -55 to +150 -55 to +175 v ma pf o o o o o typical thermal resistance (note 2) r ojc c/w o c o notes: 1. 300us pulse width, duty cycle 2%. 2. thermal resistance junction to case. 3. measured at 1.0mhz and applied reverse voltage of 4.0v dc. o high tjm low irrm schottky barrier diodes MBR2030CT mbr2035ct mbr2040ct mbr2045ct v rrm v 30 35 40 45 v rms v 21 24.5 28 31.5 v dc v 30 35 40 45 peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (jedec method) dv/dt voltage rate of change (rated v r ) 10000 v/us c o t stg storage temperature range features * metal of silicon rectifier, majority carrier conducton * guard ring for transient protection * low power loss, high efficiency * high current capability, low v f * high surge capacity * for use in low voltage, high frequency inverters, free whelling, and polarity protection applications mechanical data * case: to-220ab molded plastic * polarity: as marked on the body * weight: 2 grams * mounting position: any a=anode, c=cathode, tab=cathode a a c c(tab) a c a dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions to-220ab * rohs compliant p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
MBR2030CT thru mbr2045ct high tjm low irrm schottky barrier diodes f i g . 2 - m axim u m no n - re p e t i t i v e su r g e cu r r e n t n u m b e r of cy cl es a t 60 hz peak f o r w ard surg e current , a m p e r e s 1 5 10 50 10 0 2 20 0 25 50 75 10 0 125 15 0 f i g . 1 - f o r w ar d cu rr e n t de r a t i ng c u r v e avera g e f o r w a r d c u r r e n t a m p e r e s 25 75 100 1 2 5 1 50 5 0 50 20 17 5 8 . 3 m s sin g le h a lf - s in e - w a ve ( j e d e c me t h o d ) 15 0 10 re si s t i v e o r in duct i v e l o a d ca se t e m p er a t ur e , c p e r c e n t o f r a t e d peak r e verse v o l t a g e (%) f ig.3 - t ypic a l rever s e cha r a ct erist i cs i n st ant a neo u s re v e r s e curre nt , ( ma ) 20 40 12 0 140 0 0. 01 1. 0 10 10 0 0 100 60 8 0 10 0 t j = 1 0 0 c 0. 1 t j = 25 c t j = 7 5 c i n st ant a neo u s f o r w ard vo l t ag e , vo l t s f ig.4 - t y p i ca l f o r w a r d cha ra ct e r is t i cs i n st a n t a neo u s f o r w ard c u r r e n t ,( a ) 0. 2 0. 3 0. 7 0. 8 1. 0 10 10 0 0. 4 0 . 5 0. 6 0. 1 1. 0 0. 9 i n st ant a neo u s f o r w ard vo l t ag e , vo l t s f ig.4 - t y p i ca l f o r w a r d cha ra ct e r is t i cs i n st a n t a neo u s f o r w ard c u r r e n t ,( a ) 0. 1 1. 0 10 10 0 0. 1 p u ls e w i d t h 3 0 0u s 2 % d u ty c y c l e t j = 2 5 c f ig.5 - t y p i c a l junct io n c a p a c it a n c e c a p a ci t a nce , (pf ) re ve rs e v o l t a g e , v o l t s 10 1 10 0 10 0 0 0 10 0 0 100 0. 1 4 t j = 2 5 c, f = 1 m hz p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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